FDA16N50-F109
Manufacturer Product Number:

FDA16N50-F109

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDA16N50-F109-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN

Inventory:

270 Pcs New Original In Stock
12946682
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FDA16N50-F109 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
UniFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1945 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
205W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3

Datasheet & Documents

Datasheets
FDA16N50(_F109)

Additional Information

Other Names
2156-FDA16N50-F109
ONSFSCFDA16N50-F109
Standard Package
184

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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