DMWSH120H28SM4Q
Manufacturer Product Number:

DMWSH120H28SM4Q

Product Overview

Manufacturer:

Diodes Incorporated

DiGi Electronics Part Number:

DMWSH120H28SM4Q-DG

Description:

SIC MOSFET BVDSS: >1000V TO247-4
Detailed Description:
N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole TO-247-4

Inventory:

59 Pcs New Original In Stock
13000680
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DMWSH120H28SM4Q Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Diodes Incorporated
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
28.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs
156.3 nC @ 15 V
Vgs (Max)
+19V, -8V
Power Dissipation (Max)
429W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

Datasheet & Documents

Additional Information

Other Names
31-DMWSH120H28SM4Q
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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