Manufacturer Product Number:
AS1M025120T
Product Overview
Manufacturer:
ANBON SEMICONDUCTOR (INT'L) LIMITED
DiGi Electronics Part Number:
AS1M025120T-DG
Description:
N-CHANNEL SILICON CARBIDE POWER
Detailed Description:
N-Channel 1200 V 65A (Tc) 370W (Tc) Through Hole TO-247-4
Inventory:
15 Pcs New Original In Stock
12988912
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AS1M025120T Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Anbon Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
370W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Additional Information
Other Names
4530-AS1M025120T
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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